Effect of the radiation power on the modification of oscillations of the photocurrent in single-barrier $p{-}i{-}n$ GaAs/AlAs/GaAs heterostructures with InAs quantum dots

The effect of the power of incident light radiation on the behavior of quantum oscillations of the photocurrent in single-barrier $p{-}i{-}n$ GaAs/AlAs heterostructures with InAs quantum dots has been studied. The strong suppression of initial oscillations with increasing power caused by the destructive effect of random fluctuations of the potential generated by the accumulation of the charge at hole levels of quantum dots has been found. The critical effect of recombination in the region of the heavily doped $p$ layer on the relative amplitude of oscillations at low powers has been revealed. The generation of the current observed in $n{-}i{-}n$ resonant-tunneling structures has been detected at a high power. A new qualitative model of the formation of oscillations based on the diffusion transport of photoexcited electrons from the $p$ layer has been proposed. This model has also been confirmed by measurements of oscillations at various wavelengths.