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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2021, Volume 113, Issue 1, Pages 10–20
DOI: https://doi.org/10.31857/S123456782101002X
(Mi jetpl6331)
 

This article is cited in 25 scientific papers (total in 25 papers)

CONDENSED MATTER

Valley orientation of electrons and excitons in atomically thin transition metal dichalcogenide monolayers (brief review)

M. M. Glazov, E. L. Ivchenko

Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia
References:
Abstract: The main aspects of physical phenomena associated with the optical orientation of the spin and valley degrees of freedom in transition metal dichalcogenide monolayers and in van der Waals heterostructures based on them have been briefly reviewed. Owing to features of the band structure and spin–orbit coupling in such systems, circularly polarized light induces optical transitions in different valleys $\mathbb{K}_+$ and $\mathbb{K}_-$ of the Brillouin zone; consequently, the optical orientation of charge carriers and excitons is accompanied by their valley polarization. The main features of the band structure of transition metal dichalcogenide monolayers, excitonic effects, and results of theoretical studies of the valley orientation of excitons and electrons at one-photon absorption have been reported. The linear–circular dichroism and valley orientation of free charge carriers and excitons at multiphoton absorption have been studied. Effects associated with the trigonal symmetry of monolayers, including the inversion of valley polarization at two-photon transitions and the second harmonic generation, have been discussed. The considered theoretical models have been illustrated by experimental data.
Funding agency Grant number
Russian Foundation for Basic Research 17-02-00383_а
17-52-16020- НЦНИЛ_a
Russian Science Foundation 19-12-00051
Some works cited in this brief review were supported in part by the Russian Foundation for Basic Research (project nos. 17-02-00383_a and 17-52-16020-CNRS_a). Original results reported in Section 4 were obtained under the support of the Russian Science Foundation (project no. 19-12-00051).
Received: 10.11.2020
Revised: 10.11.2020
Accepted: 11.11.2020
English version:
Journal of Experimental and Theoretical Physics Letters, 2021, Volume 113, Issue 1, Pages 7–17
DOI: https://doi.org/10.1134/S0021364021010033
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. M. Glazov, E. L. Ivchenko, “Valley orientation of electrons and excitons in atomically thin transition metal dichalcogenide monolayers (brief review)”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:1 (2021), 10–20; JETP Letters, 113:1 (2021), 7–17
Citation in format AMSBIB
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  • This publication is cited in the following 25 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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