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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2020, Volume 112, Issue 4, Pages 246–250
DOI: https://doi.org/10.31857/S1234567820160053 (Mi jetpl6238) 		 
This article is cited in 3 scientific papers (total in 3 papers)

CONDENSED MATTER

Localization of excitons on planar defects in semiconductor crystals

M. M. Mahmoodianab, A. V. Chaplikab

a Novosibirsk State University, Novosibirsk, 630090 Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
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DOI: https://doi.org/10.31857/S1234567820160053
Abstract: Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential $-V\delta(z)$, are studied theoretically. The ratio of the amplitude $V$ to $e^2/\varepsilon$ ($\varepsilon$ is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with $V$ according to power laws $V^{1/4}$ and $V$ in the cases of weak and strong localization, respectively.
Received: 18.06.2020
Revised: 27.06.2020
Accepted: 10.07.2020
English version:
Journal of Experimental and Theoretical Physics Letters, 2020, Volume 112, Issue 4, Pages 230–233
DOI: https://doi.org/10.1134/S0021364020160080
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. M. Mahmoodian, A. V. Chaplik, “Localization of excitons on planar defects in semiconductor crystals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:4 (2020), 246–250; JETP Letters, 112:4 (2020), 230–233
Citation in format AMSBIB
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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