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This article is cited in 4 scientific papers (total in 4 papers)
CONDENSED MATTER
Microstructure and formation mechanism of V-defects in the InGaN/GaN multiple quantum wells with a high in content
H. Wanga, Q. Tanba, X. Hea a Academy of Electronic Information and Electrical Engineering, Xiangnan University, 423000 Chenzhou, China
b Institute of Physics and Information Science, Hunan Normal University, 410081 Changsha, China
Received: 02.06.2020 Revised: 19.06.2020 Accepted: 19.06.2020
Citation:
H. Wang, Q. Tan, X. He, “Microstructure and formation mechanism of V-defects in the InGaN/GaN multiple quantum wells with a high in content”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:3 (2020), 172–173; JETP Letters, 112:3 (2020), 157–160
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https://www.mathnet.ru/eng/jetpl6228 https://www.mathnet.ru/eng/jetpl/v112/i3/p172
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Abstract page: | 68 | Full-text PDF : | 5 | References: | 14 | First page: | 4 |
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