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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2020, Volume 112, Issue 2, Pages 112–113
DOI: https://doi.org/10.31857/S1234567820140086 (Mi jetpl6219) 		 
This article is cited in 10 scientific papers (total in 10 papers)

CONDENSED MATTER

High thermal conductivity of bulk GaN single crystal: An accurate experimental determination

A. V. Inyushkina, A. N. Taldenkova, D. A. Chernodubova, V. V. Voronenkovb, Yu. G. Shretercb

a National Research Center Kurchatov Institute, 123182 Moscow, Russia
b Ioffe Institute, 194021 St. Petersburg, Russia
c Peter the Great St. Petersburg Polytechnic University, 195251 St. Petersburg, Russia
Full-text PDF (155 kB) Citations (10)
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DOI: https://doi.org/10.31857/S1234567820140086
Funding agency Grant number
Russian Foundation for Basic Research 19-07-00229
National Research Centre "Kurchatov Institute"
Thermal conductivity, Raman, and magnetic measurements were carried out at the Resource Center funded by the National Research Center Kurchatov Institute. A.V. Inyushkin, A.N. Taldenkov, and D.A. Chernodubov acknowledge the support of the Russian Foundation for Basic Research (project no. 19-07-00229).
Received: 19.05.2020
Revised: 01.06.2020
Accepted: 02.06.2020
English version:
Journal of Experimental and Theoretical Physics Letters, 2020, Volume 112, Issue 2, Pages 106–111
DOI: https://doi.org/10.1134/S0021364020140039
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. V. Inyushkin, A. N. Taldenkov, D. A. Chernodubov, V. V. Voronenkov, Yu. G. Shreter, “High thermal conductivity of bulk GaN single crystal: An accurate experimental determination”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:2 (2020), 112–113; JETP Letters, 112:2 (2020), 106–111
Citation in format AMSBIB
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    • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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