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This article is cited in 8 scientific papers (total in 8 papers)
CONDENSED MATTER
Magnetoelectric effect in CoFeB/MgO/CoFeB magnetic tunnel junctions
I. Yu. Pashen'kina, M. V. Sapozhnikovab, N. S. Guseva, V. V. Rogova, D. A. Tatarskiiba, A. A. Fraermana, M. N. Volochaevc a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950 Russia
b Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950 Russia
c Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036 Russia
Abstract:
The possibility of electrical control of the interlayer exchange interaction in CoFeB/MgO/CoFeB tunnel junctions exhibiting magnetoresistance of $\sim200\%$ is studied. It is shown that the increase in the applied voltage from $50$ mV to $1.25$ V leads to a shift of the magnetization curve of the free layer by $10$ Oe at a current density of $\sim10^3$ A/cm$^2$. The discovered effect can be used in the development of energy-efficient random access memory.
Received: 27.04.2020 Revised: 01.05.2020 Accepted: 01.05.2020
Citation:
I. Yu. Pashen'kin, M. V. Sapozhnikov, N. S. Gusev, V. V. Rogov, D. A. Tatarskii, A. A. Fraerman, M. N. Volochaev, “Magnetoelectric effect in CoFeB/MgO/CoFeB magnetic tunnel junctions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 111:12 (2020), 815–818; JETP Letters, 111:12 (2020), 690–693
Linking options:
https://www.mathnet.ru/eng/jetpl6195 https://www.mathnet.ru/eng/jetpl/v111/i12/p815
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