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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2020, Volume 111, Issue 10, Pages 668–673
DOI: https://doi.org/10.31857/S1234567820100043 (Mi jetpl6172) 		 
CONDENSED MATTER

Magneto-oscillations of the charge of a field-effect transistor that are due to a microwave-induced nonequilibrium electron energy distribution

S. I. Dorozhkina, A. A. Kapustina, V. Umanskiib, J. H. Smetc

a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432 Russia
b Department of Physics, Weizmann Institute of Science, 76100 Rehovot, Israel
c Max-Planck-Institut für Festkörperforschung, D-70569 Stuttgart, Germany
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DOI: https://doi.org/10.31857/S1234567820100043
Abstract: The observation of microwave-induced changes in the charge of a field effect transistor with a channel formed by a bilayer electron system has confirmed that microwave radiation induces a nonequilibrium electron energy distribution function, which generates magneto-oscillations of the resistance of two-dimensional electron systems. The observed periodicity and beating of magneto-oscillations of the charge have been explained by the redistribution of electrons between the layers, which occurs because of the corresponding nonequilibrium occupation of electronic states.
Funding agency Grant number
German-Israeli Foundation for Scientific Research and Development
V. Umansky and J. H. Smet acknowledge the support of the German–Israeli Foundation for Scientific Research and Development (GIF).
Received: 06.04.2020
Revised: 16.04.2020
Accepted: 16.04.2020
English version:
Journal of Experimental and Theoretical Physics Letters, 2020, Volume 111, Issue 10, Pages 562–567
DOI: https://doi.org/10.1134/S0021364020100070
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. I. Dorozhkin, A. A. Kapustin, V. Umanskii, J. H. Smet, “Magneto-oscillations of the charge of a field-effect transistor that are due to a microwave-induced nonequilibrium electron energy distribution”, Pis'ma v Zh. Èksper. Teoret. Fiz., 111:10 (2020), 668–673; JETP Letters, 111:10 (2020), 562–567
Citation in format AMSBIB
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