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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2020, Volume 111, Issue 5, Pages 301–302
DOI: https://doi.org/10.31857/S0370274X20050045 (Mi jetpl6121) 		 
This article is cited in 2 scientific papers (total in 2 papers)

OPTICS AND NUCLEAR PHYSICS

Microstructural characterization of V-defects in InGaN/GaN multiquantum wells

H. Wanga, G. Jina, Q. Tanba

a Academy of Electronic Information and Electrical Engineering, Xiangnan University Chenzhou, 423000, China
b Institute of Physics and Information Science, Hunan Normal University, Changsha, 410081, China
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DOI: https://doi.org/10.31857/S0370274X20050045
Received: 27.12.2019
Revised: 02.02.2020
Accepted: 02.02.2020
English version:
Journal of Experimental and Theoretical Physics Letters, 2020, Volume 111, Issue 5, Pages 264–267
DOI: https://doi.org/10.1134/S0021364020050021
Bibliographic databases:
Document Type: Article
Language: English
Citation: H. Wang, G. Jin, Q. Tan, “Microstructural characterization of V-defects in InGaN/GaN multiquantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 111:5 (2020), 301–302; JETP Letters, 111:5 (2020), 264–267
Citation in format AMSBIB
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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