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This article is cited in 4 scientific papers (total in 4 papers)
CONDENSED MATTER
Field effect in the linear and nonlinear conductivity of the layered quasi-one-dimensional semiconductor TiS$_3$
I. G. Gorlovaa, A. V. Frolova, A. P. Orlova, V. Ya. Pokrovskiia, Woei Wu Paib a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
b Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
Abstract:
Field-effect transistor structures based on whiskers of layered quasi-one-dimensional semiconductor TiS$_3$ have been fabricated. The dependences of the conductivity $\sigma$ on the gate voltage $V_{\text{g}}$, as well as the current-voltage characteristics of whiskers (“source-drain”) at different $V_{\text{g}}$ values, have been measured in the temperature range of $4.2$–$300$ K. As the temperature decreases, the sensitivity of the conductivity to the gate voltage, $\alpha\equiv 1/\sigma\,\text{d}\sigma/\text{d}V_{\text{g}}$, increases in the range from $300$ to $80$ K and decreases sharply below $80$ K, where the nonlinear conductivity begins to depend on $V_{\text{g}}$. The results can be explained by the formation of an electronic crystal at low temperatures.
Received: 07.08.2019 Revised: 13.08.2019 Accepted: 13.08.2019
Citation:
I. G. Gorlova, A. V. Frolov, A. P. Orlov, V. Ya. Pokrovskii, Woei Wu Pai, “Field effect in the linear and nonlinear conductivity of the layered quasi-one-dimensional semiconductor TiS$_3$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:6 (2019), 400–406; JETP Letters, 110:6 (2019), 417–423
Linking options:
https://www.mathnet.ru/eng/jetpl6005 https://www.mathnet.ru/eng/jetpl/v110/i6/p400
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Abstract page: | 117 | Full-text PDF : | 15 | References: | 20 | First page: | 5 |
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