Abstract:
Conditions for the fabrication of lateral semiconductor spin devices with a high efficiency of spin injection have been revealed. Technological aspects of the formation of magnetic elements of a spin device, its electric contacts, and a thin MgO dielectric layer necessary for the efficient injection of spin-polarized electrons have been considered in detail. The degree of polarization of electrons for InSb about 25% has been obtained for the first time.
This work was supported by the Ministry of Science and Higher Education of the Russian Federation (theme no. AAAA-A18-118020290104-2 “Spin”) and by the Russian Foundation for Basic Research (project no. 19-02-00038).
Citation:
N. A. Viglin, V. M. Tsvelikhovskaya, N. A. Kulesh, T. N. Pavlov, “Effective injection of spins from a ferromagnetic metal to the InSb semiconductor”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:4 (2019), 248–254; JETP Letters, 110:4 (2019), 273–278