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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2019, Volume 109, Issue 6, Pages 381–386
DOI: https://doi.org/10.1134/S0370274X19060079
(Mi jetpl5852)
 

This article is cited in 6 scientific papers (total in 6 papers)

OPTICS AND NUCLEAR PHYSICS

Effect of strongly mismatched GaAs and InAs inserts in a InAlAs buffer layer on the structural and optical properties of metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs quantum-confined heterostructures

V. A. Solov'eva, M. Yu. Chernova, O. S. Komkovab, D. D. Firsovb, A. A. Sitnikovaa, S. V. Ivanova

a Ioffe Institute, St. Petersburg, Russia
b St. Petersburg State Electrotechnical University LETI, St. Petersburg, Russia
Full-text PDF (990 kB) Citations (6)
References:
Abstract: Metamorphic InAs(Sb)/InGaAs/InAlAs quantum-confined heterostructures with thin ($1$$5$ nm) strongly mismatched GaAs and InAs inserts in a gradient metamorphic In$_x$Al$_{1-x}$As buffer layer have been grown on GaAs (001) substrates by molecular beam epitaxy. It has been shown that the use of a $5$-nm GaAs insert in the region of a metamorphic buffer layer at $x\sim 0.37$ almost doubles the photoluminescence intensity at $300$ K ($\lambda\sim 3.5 \mu$m) from an InAs/InGaAs quantum well with a monolayer InSb insert. This is explained by an increase in the hole localization energy in InSb measured by photomodulation reflection Fourier transform infrared spectroscopy. This increase is due to increased elastic stresses in the quantum well because of a decreased density of threading dislocations in this structure caused by the introduction of an additional inverse step into the metamorphic buffer layer in the form of a $5$-nm GaAs layer. The introduction of a $5$-nm InAs layer into the metamorphic buffer layer violates its functions as a dislocation filter, leading to a higher density of dislocations in the quantum well region and to an order of magnitude decrease in the luminescence intensity.
Received: 23.01.2019
Revised: 23.01.2019
Accepted: 24.01.2019
English version:
Journal of Experimental and Theoretical Physics Letters, 2019, Volume 109, Issue 6, Pages 377–381
DOI: https://doi.org/10.1134/S0021364019060134
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. A. Solov'ev, M. Yu. Chernov, O. S. Komkov, D. D. Firsov, A. A. Sitnikova, S. V. Ivanov, “Effect of strongly mismatched GaAs and InAs inserts in a InAlAs buffer layer on the structural and optical properties of metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs quantum-confined heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019), 381–386; JETP Letters, 109:6 (2019), 377–381
Citation in format AMSBIB
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\paper Effect of strongly mismatched GaAs and InAs inserts in a InAlAs buffer layer on the structural and optical properties of metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs quantum-confined heterostructures
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  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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