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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2019, Volume 109, Issue 4, Pages 258–264
DOI: https://doi.org/10.1134/S0370274X1904012X (Mi jetpl5832) 		 
CONDENSED MATTER

Electron paramagnetic resonance in Ge/Si heterostructures with Mn-doped quantum dots

A. F. Zinovievaa, V. A. Zinovyeva, N. P. Stepinaa, A. V. Katsyubaa, A. V. Dvurechenskiiab, A. K. Gutakovskiia, L. V. Kulikcb, A. S. Bogomyakovd, S. B. Erenburge, S. V. Trubinae, M. Voelskowf

a Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
b Novosibirsk State University, Novosibirsk, Russia
c Institute of Chemical Kinetics and Combustion, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
d International Tomography Center, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
e Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
f Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany
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DOI: https://doi.org/10.1134/S0370274X1904012X
Abstract: Ge/Si quantum dot (QD) structures doped with Mn have been tested by the EPR method to find the optimal conditions for formation of the diluted magnetic semiconductor (DMS) phase inside QDs. The effect of Mn doping has been studied for two series of samples: series A with QDs grown at $450^\circ$C and varied Mn concentration and series B with QDs grown at different temperature with Mn concentration $x = 0.02$. Several effects of modification of the EPR spectra due to Mn presence in the samples have been obtained. These effects are related to (i) strain reduction due to Ge–Si intermixing, (ii) QD enlargement and change in QD shape, (iii) presence of an additional magnetic field produced by Mn atoms incorporated in QDs. The data obtained allow us to understand the reasons for irreproducibility of the results available in the literature on the creation of magnetic Ge$_{1 - x}$Mn$_x$ quantum dots.
Funding agency Grant number
Russian Foundation for Basic Research 16-02-00397_а
16-02-00175_а
Siberian Branch of Russian Academy of Sciences 0306-2016-0015
Received: 15.11.2018
Revised: 14.12.2018
Accepted: 18.12.2018
English version:
Journal of Experimental and Theoretical Physics Letters, 2019, Volume 109, Issue 4, Pages 270–275
DOI: https://doi.org/10.1134/S0021364019040143
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. F. Zinovieva, V. A. Zinovyev, N. P. Stepina, A. V. Katsyuba, A. V. Dvurechenskii, A. K. Gutakovskii, L. V. Kulik, A. S. Bogomyakov, S. B. Erenburg, S. V. Trubina, M. Voelskow, “Electron paramagnetic resonance in Ge/Si heterostructures with Mn-doped quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:4 (2019), 258–264; JETP Letters, 109:4 (2019), 270–275
Citation in format AMSBIB
\Bibitem{ZinZinSte19}
\by A.~F.~Zinovieva, V.~A.~Zinovyev, N.~P.~Stepina, A.~V.~Katsyuba, A.~V.~Dvurechenskii, A.~K.~Gutakovskii, L.~V.~Kulik, A.~S.~Bogomyakov, S.~B.~Erenburg, S.~V.~Trubina, M.~Voelskow
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