Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pis'ma v Zh. Èksper. Teoret. Fiz.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2019, Volume 109, Issue 2, Pages 118–123
DOI: https://doi.org/10.1134/S0370274X19020103 (Mi jetpl5804) 		 
This article is cited in 14 scientific papers (total in 14 papers)

CONDENSED MATTER

Cr-containing ferromagnetic film-topological insulator heterostructures as promising materials for the quantum anomalous Hall effect

E. K. Petrovab, I. V. Silkina, T. V. Menshchikovaa, E. V. Chulkovbcd

a National Research Tomsk State University, Tomsk, Russia
b St. Petersburg State University, St. Petersburg, Russia
c Departamento de Física de Materiales UPV/EHU, Centro de Física de Materiales CFM–MPC and Centro Mixto CSIC-UPV/EHU, San Sebastián/Donostia, Spain
d Donostia International Physics Center (DIPC), San Sebastián/Donostia, Basque Country, Spain
Full-text PDF (1215 kB) Citations (14)
References:
PDF
HTML
DOI: https://doi.org/10.1134/S0370274X19020103
Abstract: Two heterostructures consisting of a Bi$_2$Se$_3$ topological insulator substrate and a CrI$_3$ or CrBi$_2$Se$_4$ ferromagnetic insulator thin film have been theoretically studied. The calculated band structure indicates that both heterostructures exhibit the quantum anomalous Hall effect with the splitting of the topological surface state of 19 and 92 meV for CrI$_3$/Bi$_2$Se$_3$ and CrBi$_2$Se$_4$ /Bi$_2$Se$_3$ , respectively. It has been shown that the band gap is determined primarily by the degree of localization of the wavefunction of the topological state in the ferromagnetic film. This degree of localization depends on the height and width of the interface barrier between the substrate and ferromagnetic material. Both the height and width of the interface barrier in the CrBi$_2$Se$_4$ /Bi$_2$Se$_3$ system are similar to the respective characteristics of the van der Waals barrier in bulk Bi$_2$Se$_3$.
Funding agency Grant number
Russian Foundation for Basic Research 18-32-00728
Ministry of Education and Science of the Russian Federation 3.9003.2017/9.10
Mendeleev Tomsk State University Fund Program 8.1.01.2018
Saint Petersburg State University 15.61.202.2015
Received: 06.11.2018
Revised: 21.11.2018
Accepted: 21.11.2018
English version:
Journal of Experimental and Theoretical Physics Letters, 2019, Volume 109, Issue 2, Pages 121–125
DOI: https://doi.org/10.1134/S0021364019020127
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. K. Petrov, I. V. Silkin, T. V. Menshchikova, E. V. Chulkov, “Cr-containing ferromagnetic film-topological insulator heterostructures as promising materials for the quantum anomalous Hall effect”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:2 (2019), 118–123; JETP Letters, 109:2 (2019), 121–125
Citation in format AMSBIB
\Bibitem{PetSilMen19}
\by E.~K.~Petrov, I.~V.~Silkin, T.~V.~Menshchikova, E.~V.~Chulkov
\paper Cr-containing ferromagnetic film-topological insulator heterostructures as promising materials for the quantum anomalous Hall effect
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2019
\vol 109
\issue 2
\pages 118--123
\mathnet{http://mi.mathnet.ru/jetpl5804}
\crossref{https://doi.org/10.1134/S0370274X19020103}
\elib{https://elibrary.ru/item.asp?id=36855228}
\transl
\jour JETP Letters
\yr 2019
\vol 109
\issue 2
\pages 121--125
\crossref{https://doi.org/10.1134/S0021364019020127}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000467096800010}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85064890726}
Linking options:
  • https://www.mathnet.ru/eng/jetpl5804
  • https://www.mathnet.ru/eng/jetpl/v109/i2/p118
    • This publication is cited in the following 14 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
    Statistics & downloads:
    Abstract page:260
    Full-text PDF :37
    References:40
    First page:4
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024