Abstract:
The electronic and optical spectra of the Bi2Se3 topological insulator digitally doped with V, Cr, Mn, Fe, and Co atoms are calculated using density functional theory. It is shown that the introduction of magnetic atoms into separate delta layers (one per 2–9 Bi2Se3 quintuple layers) multiply enhances magnetic effects. A special emphasis is put on Mn doping, which gives rise to the ferromagnetic spin ordering. The sensitivity of the spin order to the concentration and location of magnetic atoms is revealed. The study of an analytical model describing the resonant scattering of electrons in Bi2Se3 by atomic layers of transition metals also suggests the existence of spin-polarized states within the Bi2Se3 band gap. Our ab initio calculations show that transitions between the nested branches of the electronic spectrum, which exist near the Fermi level, are responsible for features of the optical conductivity at ℏω≈0.15−0.3eV, the infrared plasmon, and the Kerr angle θK>12∘ in the infrared spectral range.
Citation:
E. T. Kulatov, V. N. Men'shov, V. V. Tugushev, Yu. A. Uspenskii, “Features of the electronic structure of the Bi2Se3 topological insulator digitally doped with 3d transition metals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:2 (2019), 98–104; JETP Letters, 109:2 (2019), 102–108
\Bibitem{KulMenTug19}
\by E.~T.~Kulatov, V.~N.~Men'shov, V.~V.~Tugushev, Yu.~A.~Uspenskii
\paper Features of the electronic structure of the Bi$_2$Se$_3$ topological insulator digitally doped with $3d$ transition metals
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2019
\vol 109
\issue 2
\pages 98--104
\mathnet{http://mi.mathnet.ru/jetpl5800}
\crossref{https://doi.org/10.1134/S0370274X19020061}
\elib{https://elibrary.ru/item.asp?id=36855223}
\transl
\jour JETP Letters
\yr 2019
\vol 109
\issue 2
\pages 102--108
\crossref{https://doi.org/10.1134/S0021364019020097}
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Linking options:
https://www.mathnet.ru/eng/jetpl5800
https://www.mathnet.ru/eng/jetpl/v109/i2/p98
This publication is cited in the following 7 articles:
E. T. Kulatov, Yu. A. Uspenskii, Dokl. Phys., 68:9 (2023), 291
E. T. Kulatov, Yu. A. Uspenskii, Doklady Rossiiskoi akademii nauk. Fizika, tekhnicheskie nauki, 512:1 (2023), 24
R. Masrour, G. Kadim, A. Jabar, E. K. Hlil, M. Ellouze, Appl. Phys. A, 128:11 (2022)
M. Frappa, A. E. Del Rio Castillo, F. Macedonio, G. Di Luca, E. Drioli, A. Gugliuzza, Water Res., 203 (2021), 117503
A. Yu. Kuntsevich, G. V. Rybal'chenko, V. P. Martovitskii, M. I. Bannikov, Yu. G. Selivanov, S. Yu. Gavrilkin, A. Yu. Tsvetkov, E. G. Chizhevskii, JETP Letters, 111:3 (2020), 151–156
A. V. Rozhkov, A. O. Sboychakov, D. A. Khokhlov, A. L. Rakhmanov, K. I. Kugel, JETP Letters, 112:11 (2020), 725–733
V. N. Men'shov, I. A. Shvets, E. V. Chulkov, JETP Letters, 110:12 (2019), 771–784