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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2019, Volume 109, Issue 2, Pages 98–104
DOI: https://doi.org/10.1134/S0370274X19020061
(Mi jetpl5800)
 

This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Features of the electronic structure of the Bi$_2$Se$_3$ topological insulator digitally doped with $3d$ transition metals

E. T. Kulatovab, V. N. Men'shovc, V. V. Tugusheva, Yu. A. Uspenskiia

a Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia
b Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, Russia
c Donostia International Physics Center (DIPC), San Sebastian, Basque Country, Spain
Full-text PDF (994 kB) Citations (7)
References:
Abstract: The electronic and optical spectra of the Bi$_2$Se$_3$ topological insulator digitally doped with V, Cr, Mn, Fe, and Co atoms are calculated using density functional theory. It is shown that the introduction of magnetic atoms into separate delta layers (one per 2–9 Bi$_2$Se$_3$ quintuple layers) multiply enhances magnetic effects. A special emphasis is put on Mn doping, which gives rise to the ferromagnetic spin ordering. The sensitivity of the spin order to the concentration and location of magnetic atoms is revealed. The study of an analytical model describing the resonant scattering of electrons in Bi$_2$Se$_3$ by atomic layers of transition metals also suggests the existence of spin-polarized states within the Bi$_2$Se$_3$ band gap. Our ab initio calculations show that transitions between the nested branches of the electronic spectrum, which exist near the Fermi level, are responsible for features of the optical conductivity at $\hbar\omega\approx0.15{-}0.3\,$eV, the infrared plasmon, and the Kerr angle $\theta _K>12^\circ$ in the infrared spectral range.
Funding agency Grant number
Russian Foundation for Basic Research 16-02-00612_а
16-02-00024_а
17-02-00725_а
Russian Academy of Sciences - Federal Agency for Scientific Organizations
Received: 12.10.2018
Revised: 19.11.2018
Accepted: 21.11.2018
English version:
Journal of Experimental and Theoretical Physics Letters, 2019, Volume 109, Issue 2, Pages 102–108
DOI: https://doi.org/10.1134/S0021364019020097
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. T. Kulatov, V. N. Men'shov, V. V. Tugushev, Yu. A. Uspenskii, “Features of the electronic structure of the Bi$_2$Se$_3$ topological insulator digitally doped with $3d$ transition metals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:2 (2019), 98–104; JETP Letters, 109:2 (2019), 102–108
Citation in format AMSBIB
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\paper Features of the electronic structure of the Bi$_2$Se$_3$ topological insulator digitally doped with $3d$ transition metals
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\yr 2019
\vol 109
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\pages 102--108
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  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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