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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2018, Volume 108, Issue 3, Pages 180–184
DOI: https://doi.org/10.1134/S0370274X18150067 (Mi jetpl5666) 		 
This article is cited in 2 scientific papers (total in 2 papers)

OPTICS AND NUCLEAR PHYSICS

Atomic rearrangements and photoemission processes at a $p$-GaN(Cs)-vacuum interface

V. V. Bakina, S. N. Kosolobova, S. A. Rozhkovab, H. E. Sheiblerab, A. S. Terekhova

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
b Novosibirsk State University, Novosibirsk, Russia
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DOI: https://doi.org/10.1134/S0370274X18150067
Abstract: Spontaneous changes in photoemission properties of a $p$-GaN(Cs)-vacuum interface with effective negative electronic affinity induced by rearrangements of its atomic structure have been studied for the first time. The optimum Cs coating that ensures both the maximum photoelectron escape probability and its stability has been found. A thermodynamic model has been proposed to escape the relation of the photoemission properties of the $p$-GaN(Cs)-vacuum interface to its free energy and entropy.
Funding agency Grant number
Russian Foundation for Basic Research 16-02-00534_а
Received: 20.04.2018
Revised: 04.07.2018
English version:
Journal of Experimental and Theoretical Physics Letters, 2018, Volume 108, Issue 3, Pages 180–184
DOI: https://doi.org/10.1134/S0021364018150031
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Bakin, S. N. Kosolobov, S. A. Rozhkov, H. E. Sheibler, A. S. Terekhov, “Atomic rearrangements and photoemission processes at a $p$-GaN(Cs)-vacuum interface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 108:3 (2018), 180–184; JETP Letters, 108:3 (2018), 180–184
Citation in format AMSBIB
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\paper Atomic rearrangements and photoemission processes at a $p$-GaN(Cs)-vacuum interface
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    • This publication is cited in the following 2 articles:
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