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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2018, Volume 107, Issue 10, Pages 679–683
DOI: https://doi.org/10.7868/S0370274X18100119
(Mi jetpl5581)
 

This article is cited in 16 scientific papers (total in 16 papers)

CONDENSED MATTER

Rearrangement of the structure of paratellurite crystals in a near-surface layer caused by the migration of charge carriers in an external electric field

A. G. Kulikovab, A. E. Blagovab, N. V. Marchenkovab, V. A. Lomonova, A. V. Vinogradova, Yu. V. Pisarevskyab, M. V. Kovalchukab

a Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics, Russian Academy of Sciences, Moscow, Russia
b National Research Center Kurchatov Institute, Moscow, Russia
References:
Abstract: The process of formation of surface structures in a paratellurite crystal ($\alpha$-ТеО$_2$) in an external electric field has been studied by in situ X-ray diffraction (XRD) measurements. This process is reversible and its dynamics (duration of tens of minutes) corresponds to the formation of a screening layer near the insulator-metal interface owing to the counter migration of oxygen ions and vacancies in the external electric field. The formation of domains has been observed in the experiment as the broadening and splitting of the XRD curve and is explained by mechanical stresses that appear in the high electric field near the surface in view of the piezoelectric effect and are responsible for a ferroelectric $\alpha-\beta$ phase transition. A change in the lattice parameter near the anode (surface of the crystal with a positive external charge) has been detected simultaneously. This change is due to the local rearrangement of the crystal structure because of the inflow of oxygen ions in this region and outflow of oxygen vacancies.
Funding agency Grant number
Russian Academy of Sciences - Federal Agency for Scientific Organizations 007-ГЗ/Ч3363/26
Russian Foundation for Basic Research 16-32-60045_мол_а_дк
16-29-14057_офи_м
Received: 05.03.2018
Revised: 09.04.2018
English version:
Journal of Experimental and Theoretical Physics Letters, 2018, Volume 107, Issue 10, Pages 646–650
DOI: https://doi.org/10.1134/S0021364018100120
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. G. Kulikov, A. E. Blagov, N. V. Marchenkov, V. A. Lomonov, A. V. Vinogradov, Yu. V. Pisarevsky, M. V. Kovalchuk, “Rearrangement of the structure of paratellurite crystals in a near-surface layer caused by the migration of charge carriers in an external electric field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:10 (2018), 679–683; JETP Letters, 107:10 (2018), 646–650
Citation in format AMSBIB
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\paper Rearrangement of the structure of paratellurite crystals in a near-surface layer caused by the migration of charge carriers in an external electric field
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2018
\vol 107
\issue 10
\pages 679--683
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\crossref{https://doi.org/10.1134/S0021364018100120}
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  • This publication is cited in the following 16 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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