Abstract:
Small “particles” of an open surface were formed on a SiC polar crystal with openings in the opaque metal mask covering the sample. The dimensions of the holes were about surface phonon polariton wavelength. Such a sample was irradiated with an electromagnetic wave (λ=10.68μm) at a frequency close to the lattice resonance of SiC. A significant enhancement in the field amplitude of surface phonon polariton waves was detected over such “particles” compared to the amplitude over an infinite open surface of SiC. Such a phenomenon, observed by us in the IR band, is similar to plasmon resonance on small metal particles in the visible band, but the lateral resolution of the ASNOM used (no worse than 30 nm at 10μm) makes the obtained field distribution more detailed. The maps of the local field amplitude and phase obtained on SiC surface with ASNOM are in a good quantitative agreement with simulations using the Green’s function.
Citation:
D. V. Kazantsev, E. A. Kazantseva, “Enhancement of the local electromagnetic field over planar “particles” formed on the surface of a polar crystal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:8 (2018), 532–536; JETP Letters, 107:8 (2018), 512–515
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\by D.~V.~Kazantsev, E.~A.~Kazantseva
\paper Enhancement of the local electromagnetic field over planar “particles” formed on the surface of a polar crystal
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2018
\vol 107
\issue 8
\pages 532--536
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\crossref{https://doi.org/10.7868/S0370274X1808012X}
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\jour JETP Letters
\yr 2018
\vol 107
\issue 8
\pages 512--515
\crossref{https://doi.org/10.1134/S0021364018080106}
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Linking options:
https://www.mathnet.ru/eng/jetpl5556
https://www.mathnet.ru/eng/jetpl/v107/i8/p532
This publication is cited in the following 5 articles:
D. V. Kazantsev, E. A. Kazantseva, Phys. Usp., 67:6 (2024), 588–628
V. S. Ivchenko, D. V. Kazantsev, V. A. Ievleva, E. A. Kazantseva, A. Yu. Kuntsevich, Applied Physics Letters, 125:17 (2024)
Yiming Zhong, Yun Chen, Xin Chen, 2023 24th International Conference on Electronic Packaging Technology (ICEPT), 2023, 1
D. Kazantsev, H. Ryssel, J. Appl. Phys., 127:12 (2020), 123103
V. S. Krivobok, D. A. Litvinov, S. N. Nikolaev, E. E. Onishchenko, D. A. Pashkeev, M. A. Chernopittsky, L. N. Grigor'eva, Semiconductors, 53:12 (2019), 1608–1616