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This article is cited in 10 scientific papers (total in 10 papers)
CONDENSED MATTER
Magnetoresistance of a two-dimensional TbTe$_3$ conductor in the sliding charge-density wave regime
A. V. Frolova, A. P. Orlovab, P. D. Grigorievcde, V. N. Zverevfg, A. A. Sinchenkohai, P. Monceauj a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
b Institute of Microelectronics Nanotechnologies, Russian Academy of Sciences, Moscow, Russia
c Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia
d Landau Institute for Theoretical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
e National University of Science and Technologies MISIS, Moscow, Russia
f Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow region, Russia
g Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
h Moscow State University, Moscow, Russia
i National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, Russia
j Universté Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
Abstract:
The magnetoresistance of a TbTe$_3$ two-dimensional conductor with a charge-density wave (CDW) has been measured in a wide temperature range and in magnetic fields of up to 17 T. At temperatures well below the Peierls transition temperature and in high magnetic fields, the magnetoresistance exhibits a linear dependence on the magnetic field caused by the scattering of normal charge carriers by “hot” spots of the Fermi surface. In the sliding CDW regime in low magnetic fields, a qualitative change in the magnetoresistance has been observed associated with the strong scattering of carriers by the sliding CDW.
Received: 15.03.2018
Citation:
A. V. Frolov, A. P. Orlov, P. D. Grigoriev, V. N. Zverev, A. A. Sinchenko, P. Monceau, “Magnetoresistance of a two-dimensional TbTe$_3$ conductor in the sliding charge-density wave regime”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:8 (2018), 507–511; JETP Letters, 107:8 (2018), 488–492
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https://www.mathnet.ru/eng/jetpl5552 https://www.mathnet.ru/eng/jetpl/v107/i8/p507
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