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This article is cited in 6 scientific papers (total in 6 papers)
CONDENSED MATTER
Dynamics of spontaneous electric field domains in a two-dimensional electron system irradiated by microwaves and the conductance of a donor layer
S. I. Dorozhkina, V. Umanskiib, K. von Klitzingc, J. H. Smetc a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
b Department of Physics, Weizmann Institute of Science, Rehovot, Israel
c Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
Abstract:
The temperature dependence of the switching frequency of a microwave-induced spontaneous electric field forming a domain structure and the conductance of a doping layer that provides electrons to the two-dimensional electron system have been measured on samples fabricated from the same GaAs/AlGaAs heterostructure. Both quantities have been found to obey the thermally activated dependence (Arrhenius law) with close activation energies. This result indicates a relation between the quantities and confirms a hypothesis that the observed dynamics of the domain structure originates from the dynamical screening of the spontaneous electric field of domains by charges in the doping layer.
Received: 24.11.2017
Citation:
S. I. Dorozhkin, V. Umanskii, K. von Klitzing, J. H. Smet, “Dynamics of spontaneous electric field domains in a two-dimensional electron system irradiated by microwaves and the conductance of a donor layer”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:1 (2018), 68–72; JETP Letters, 107:1 (2018), 61–65
Linking options:
https://www.mathnet.ru/eng/jetpl5468 https://www.mathnet.ru/eng/jetpl/v107/i1/p68
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