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This article is cited in 9 scientific papers (total in 9 papers)
CONDENSED MATTER
Superconductor-insulator transition in NbTiN films
M. V. Burdastykhab, S. V. Postolovaab, T. I. Baturinaab, T. Prosliercd, V. M. Vinokured, A. Yu. Mironovab a Novosibirsk State University, Novosibirsk, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
c Institut de recherches sur les lois fundamentales de l’univers, Commissariat de l’énergie atomique et aux énergies
renouvelables-Saclay, Gif-sur-Yvette, France
d Materials Science Division, Argonne National Laboratory, Argonne, USA
e Computation Institute, University of Chicago, Chicago, USA
Abstract:
Experimental results indicating a direct disorder-induced superconductor-insulator transition in NbTiN thin films have been reported. It has been shown that an increase in the resistance per square in the normal state is accompanied by the suppression of the critical temperature of the superconducting transition $T_c$ according to the fermion mechanism of suppression of superconductivity by disorder. At the same time, the temperature of the Berezinskii–Kosterlitz–Thouless transition is completely suppressed at a nonzero critical temperature and, then, the ground state changes to insulating, which is characteristic of the boson model of suppression of superconductivity by disorder. It has been shown that the temperature dependences of the resistance of insulating films follow the Arrhenius activation law.
Received: 02.11.2017
Citation:
M. V. Burdastykh, S. V. Postolova, T. I. Baturina, T. Proslier, V. M. Vinokur, A. Yu. Mironov, “Superconductor-insulator transition in NbTiN films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:11 (2017), 712–717; JETP Letters, 106:11 (2017), 749–753
Linking options:
https://www.mathnet.ru/eng/jetpl5441 https://www.mathnet.ru/eng/jetpl/v106/i11/p712
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