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This article is cited in 4 scientific papers (total in 4 papers)
CONDENSED MATTER
X-ray reflectivity and photoelectron spectroscopy of superlattices with silicon nanocrystals
D. M. Zhigunova, I. A. Kamenskikha, A. M. Lebedevb, R. G. Chumakovb, Yu. A. Logacheva, S. N. Yakuninb, P. K. Kashkarovba a Faculty of Physics, Moscow State University, Moscow, Russia
b National Research Center Kurchatov Institute, Moscow, Russia
Abstract:
The structural properties and features of the chemical composition of SiO$_x$N$_y$/SiO$_2$, SiO$_x$N$_y$/Si$_3$N$_4$, and SiN$_x$/Si$_3$N$_4$ multilayer thin films with ultrathin (1-1.5 nm) barrier SiO$_2$ or Si$_3$N$_4$ layers are studied. The films have been prepared by plasma chemical vapor deposition and have been annealed at a temperature of 1150$^\circ$ C for the formation of silicon nanocrystals in the SiO$_x$N$_y$ or SiN$_x$ silicon-rich layers with a nominal thickness of 5 nm. The period of superlattices in the studied samples has been estimated by X-ray reflectivity. The phase composition of superlattices has been studied by X-ray electron spectroscopy using the decomposition of photoelectron spectra of the Si 2$p$, N 1$s$, and O 1$s$ levels into components corresponding to different charge states of atoms.
Received: 07.09.2017 Revised: 21.09.2017
Citation:
D. M. Zhigunov, I. A. Kamenskikh, A. M. Lebedev, R. G. Chumakov, Yu. A. Logachev, S. N. Yakunin, P. K. Kashkarov, “X-ray reflectivity and photoelectron spectroscopy of superlattices with silicon nanocrystals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:8 (2017), 496–501; JETP Letters, 106:8 (2017), 517–521
Linking options:
https://www.mathnet.ru/eng/jetpl5397 https://www.mathnet.ru/eng/jetpl/v106/i8/p496
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Abstract page: | 175 | Full-text PDF : | 42 | References: | 41 | First page: | 10 |
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