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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Hall effect in hopping conduction in an ensemble of quantum dots
N. P. Stepinaa, A. V. Nenashevba, A. V. Dvurechenskiiba a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
b Novosibirsk State University, Novosibirsk, Russia
Abstract:
The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magnetic field at $4.2$ K varies in the range of $10^{-4}-10^{-12}\Omega^{-1}$, which includes both the diffusive transport under weak localization conditions and hopping conduction. It is shown that the Hall effect can be discerned against the magnetoresistance-related background in both high- and low-conductivity structures. The Hall coefficient in the hopping regime exhibits a nonmonotonic dependence on the occupancy of quantum dots by holes. This behavior correlates with that of the localization length of the hole wavefunctions.
Received: 14.07.2017 Revised: 25.07.2017
Citation:
N. P. Stepina, A. V. Nenashev, A. V. Dvurechenskii, “Hall effect in hopping conduction in an ensemble of quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:5 (2017), 288–292; JETP Letters, 106:5 (2017), 308–312
Linking options:
https://www.mathnet.ru/eng/jetpl5359 https://www.mathnet.ru/eng/jetpl/v106/i5/p288
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