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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2017, Volume 106, Issue 5, Pages 288–292
DOI: https://doi.org/10.7868/S0370274X17170052
(Mi jetpl5359)
 

This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Hall effect in hopping conduction in an ensemble of quantum dots

N. P. Stepinaa, A. V. Nenashevba, A. V. Dvurechenskiiba

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
b Novosibirsk State University, Novosibirsk, Russia
Full-text PDF (821 kB) Citations (2)
References:
Abstract: The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magnetic field at $4.2$ K varies in the range of $10^{-4}-10^{-12}\Omega^{-1}$, which includes both the diffusive transport under weak localization conditions and hopping conduction. It is shown that the Hall effect can be discerned against the magnetoresistance-related background in both high- and low-conductivity structures. The Hall coefficient in the hopping regime exhibits a nonmonotonic dependence on the occupancy of quantum dots by holes. This behavior correlates with that of the localization length of the hole wavefunctions.
Funding agency Grant number
Russian Foundation for Basic Research 16-02-00553_а
Received: 14.07.2017
Revised: 25.07.2017
English version:
Journal of Experimental and Theoretical Physics Letters, 2017, Volume 106, Issue 5, Pages 308–312
DOI: https://doi.org/10.1134/S0021364017170118
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. P. Stepina, A. V. Nenashev, A. V. Dvurechenskii, “Hall effect in hopping conduction in an ensemble of quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:5 (2017), 288–292; JETP Letters, 106:5 (2017), 308–312
Citation in format AMSBIB
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  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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