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This article is cited in 8 scientific papers (total in 8 papers)
CONDENSED MATTER
Electronic structure and absorption spectra of silicon nanocrystals with a halogen (Br, Cl) coating
N. V. Derbenyova, A. A. Konakov, A. E. Shvetsov, V. A. Burdov Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
Abstract:
Ab initio calculations of the electronic structure and frequency dependence of the imaginary part of the dielectric function for 1-2 nm silicon nanocrystals with the surface fully passivated with Cl or Br halogen atoms have been performed. According to these calculations, passivation with halogens results in the strong localization of valence electrons near the surface. As a result, the width of the band gap of a nanocrystal is noticeably narrowed and its absorptance decreases as compared to the case of hydrogen passivation. These effects are more pronounced in bromine-passivated nanocrystals.
Received: 16.06.2017 Revised: 11.07.2017
Citation:
N. V. Derbenyova, A. A. Konakov, A. E. Shvetsov, V. A. Burdov, “Electronic structure and absorption spectra of silicon nanocrystals with a halogen (Br, Cl) coating”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:4 (2017), 227–232; JETP Letters, 106:4 (2017), 247–251
Linking options:
https://www.mathnet.ru/eng/jetpl5350 https://www.mathnet.ru/eng/jetpl/v106/i4/p227
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Abstract page: | 158 | Full-text PDF : | 40 | References: | 29 | First page: | 8 |
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