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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2017, Volume 106, Issue 1, Page 51
DOI: https://doi.org/10.7868/S0370274X17130100 (Mi jetpl5312) 		 
This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Band gap tuning of Ge/SiC bilayers under an electric field: a density functional study

M. Luoa, Y. E. Xub, Y. X. Songc

a Department of Physics, Shanghai Second Polytechnic University, 201209 Shanghai, China
b Department of Electronic Engineering, Shang Hai Jian Qiao University, 201306 Shanghai, China
c Key Laboratory of Polar Materials and Devices, East China Normal University, 200241 Shanghai, China
Full-text PDF (191 kB) Citations (2)
DOI: https://doi.org/10.7868/S0370274X17130100
Received: 05.06.2017
English version:
Journal of Experimental and Theoretical Physics Letters, 2017, Volume 106, Issue 1, Pages 46–50
DOI: https://doi.org/10.1134/S0021364017130021
Bibliographic databases:
Document Type: Article
Language: English
Citation: M. Luo, Y. E. Xu, Y. X. Song, “Band gap tuning of Ge/SiC bilayers under an electric field: a density functional study”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:1 (2017), 51; JETP Letters, 106:1 (2017), 46–50
Citation in format AMSBIB
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  • https://www.mathnet.ru/eng/jetpl/v106/i1/p51
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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