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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2017, Volume 105, Issue 10, Pages 605–609
DOI: https://doi.org/10.7868/S0370274X17100058 (Mi jetpl5270) 		 
CONDENSED MATTER

Hole-stimulated transfer of traps in dielectrics

Yu. N. Novikov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
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DOI: https://doi.org/10.7868/S0370274X17100058
Abstract: The transport of traps in a dielectric after capture of holes in an electric field is considered with the inclusion of the two-band conduction. The distance covered by a trap with a trapped hole decreases exponentially with an increase in the electric field. A value of $3\times 10^{-15}\,$cm$^2/(\text{Vs})$ has been determined for the mobility of traps with trapped holes in Si$_3$N$_4$.
Received: 21.03.2017
English version:
Journal of Experimental and Theoretical Physics Letters, 2017, Volume 105, Issue 10, Pages 646–650
DOI: https://doi.org/10.1134/S0021364017100101
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. N. Novikov, “Hole-stimulated transfer of traps in dielectrics”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:10 (2017), 605–609; JETP Letters, 105:10 (2017), 646–650
Citation in format AMSBIB
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    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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