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CONDENSED MATTER
Hole-stimulated transfer of traps in dielectrics
Yu. N. Novikov Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Abstract:
The transport of traps in a dielectric after capture of holes in an electric field is considered with the inclusion of the two-band conduction. The distance covered by a trap with a trapped hole decreases exponentially with an increase in the electric field. A value of $3\times 10^{-15}\,$cm$^2/(\text{Vs})$ has been determined for the mobility of traps with trapped holes in Si$_3$N$_4$.
Received: 21.03.2017
Citation:
Yu. N. Novikov, “Hole-stimulated transfer of traps in dielectrics”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:10 (2017), 605–609; JETP Letters, 105:10 (2017), 646–650
Linking options:
https://www.mathnet.ru/eng/jetpl5270 https://www.mathnet.ru/eng/jetpl/v105/i10/p605
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Statistics & downloads: |
Abstract page: | 158 | Full-text PDF : | 60 | References: | 42 | First page: | 6 |
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