Bifurcations of the Creation of Low-Temperature Maxima of the Tunneling Conductance of a “dirty” $N$-$I$-$N$ Junction

The representation of the tunneling conductance $G(T)$ of the “dirty” (with low concentrations of the same nonmagnetic impurities in the I layer) $N$-$I$-$N$ junction (where $N$ is a normal metal and $I$ is an insulator) in the form of a sum of conductances of random quantum jumpers penetrating the disordered $I$ layer is obtained in the low-temperature region. It is shown that the axis of the parameter $\delta=|\varepsilon_0-\varepsilon_{\mathrm{F}}|$ giving the deviation of the energy of $\varepsilon_0$ the quasi-local electron state on the impurity in the I layer from the Fermi energy of $\varepsilon_{\mathrm{F}}$ the dirty $N$-$I$-$N$ junction contains a series of bifurcation points, at the transition through each of which (in the direction of the increase in $\delta$) the number of maxima on the temperature dependence $G(T)$ increases by unity; i.e., a new maximum is “born” on the curve $G(T)$. Numerical estimates are given for the characteristic parameters of dirty $N$-$I$-$N$ junctions indicating the possibility of the experimental observation of at least the first of these maxima.