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CONDENSED MATTER
Interlayer current near the edge of an $\mathrm{InAs/GaSb}$ double quantum well in proximity with a superconductor
A. Kononova, S. V. Egorova, N. Titovab, B. R. Semyaginc, V. V. Preobrazhenskiic, M. A. Putyatoc, E. A. Emelyanovc, E. V. Deviatova a Institute of Solid State Physics RAS, 142432 Chernogolovka, Russia
b Moscow State Pedagogical University, 119991 Moscow, Russia
c Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
Abstract:
We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an $\mathrm{InAs/GaSb}$ double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I$–$V$ curves, we conclude that the proximity-induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonic for the field that is normal to the bilayer plane.
Received: 22.03.2017
Citation:
A. Kononov, S. V. Egorov, N. Titova, B. R. Semyagin, V. V. Preobrazhenskii, M. A. Putyato, E. A. Emelyanov, E. V. Deviatov, “Interlayer current near the edge of an $\mathrm{InAs/GaSb}$ double quantum well in proximity with a superconductor”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:8 (2017), 497–498; JETP Letters, 105:8 (2017), 508–513
Linking options:
https://www.mathnet.ru/eng/jetpl5245 https://www.mathnet.ru/eng/jetpl/v105/i8/p497
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