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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 87, Issue 5, Pages 291–295 (Mi jetpl52)  

This article is cited in 1 scientific paper (total in 1 paper)

ATOMS, SPECTRA, RADIATIONS

Time dependence of a level anticrossing signal in exciton emission from a GaSe crystal under resonant excitation conditions

A. N. Starukhin, D. K. Nelson, B. S. Razbirin

Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
Full-text PDF (776 kB) Citations (1)
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Abstract: The time dependence of the Zeeman-sublevel anticrossing signal in triplet-bound exciton emission from gallium selenide has been investigated under resonant excitation conditions. It has been found that the shape of the anticrossing signal varies during the lifetime of the excited state. The time dependence of the anticrossing signal in the case of the resonant excitation of exciton states differs significantly from the corresponding dependence observed in the case of the band-to-band excitation of luminescence. A theoretical description is proposed for the observed effects.
Received: 24.12.2007
Revised: 29.01.2008
English version:
Journal of Experimental and Theoretical Physics Letters, 2008, Volume 87, Issue 5, Pages 243–247
DOI: https://doi.org/10.1134/S0021364008050044
Bibliographic databases:
Document Type: Article
PACS: 71.35.Ji, 78.20.Ls, 78.47.Cd, 78.55.Hx
Language: Russian


Citation: A. N. Starukhin, D. K. Nelson, B. S. Razbirin, “Time dependence of a level anticrossing signal in exciton emission from a GaSe crystal under resonant excitation conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:5 (2008), 291–295; JETP Letters, 87:5 (2008), 243–247
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  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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