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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2017, Volume 105, Issue 4, Pages 230–234
DOI: https://doi.org/10.7868/S0370274X17040099
(Mi jetpl5198)
 

This article is cited in 10 scientific papers (total in 10 papers)

CONDENSED MATTER

Electronic and transport properties of heterophase compounds based on MoS$_2$

D. G. Kvashninab, L. A. Chernozatonskiia

a Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, Moscow, Russia
b National University of Science and Technology MISiS, Moscow, Russia
References:
Abstract: New heterophase superlattices based on MoS$_2$ are studied in detail by the electron density functional theory. It is shown that the incorporation of the 1 T phase in the 2H-MoS$_2$ monolayer is responsible for the formation of electronic levels near the Fermi level and quantum wells in the transverse direction of superlattices. The proposed lateral heterophase structures of transition metal dichalcogenides are promising for the construction of new elements of nanoelectronics.
Funding agency Grant number
Russian Science Foundation 14-12-01217
Received: 07.12.2016
Revised: 22.12.2016
English version:
Journal of Experimental and Theoretical Physics Letters, 2017, Volume 105, Issue 4, Pages 250–254
DOI: https://doi.org/10.1134/S0021364017040117
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. G. Kvashnin, L. A. Chernozatonskii, “Electronic and transport properties of heterophase compounds based on MoS$_2$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:4 (2017), 230–234; JETP Letters, 105:4 (2017), 250–254
Citation in format AMSBIB
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\paper Electronic and transport properties of heterophase compounds based on MoS$_2$
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  • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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