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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2017, Volume 105, Issue 2, Page 105
DOI: https://doi.org/10.7868/S0370274X17020096 (Mi jetpl5171) 		 
CONDENSED MATTER

Modulation of band gap by normal strain and an applied electric field in SiC-based heterostructures

M. Luoa, Y. E. Xuab, Y. X. Songc

a Department of Electronic Engineering, Shang Hai Jian Qiao University, 201306 Shanghai, China
b School of Microelectronic of Fudan University, 200433 Shanghai, China
c Key Laboratory of Polar Materials and Devices, East China Normal University, 200241 Shanghai, China
Full-text PDF (324 kB)
DOI: https://doi.org/10.7868/S0370274X17020096
Received: 24.10.2016
Revised: 08.12.2016
English version:
Journal of Experimental and Theoretical Physics Letters, 2017, Volume 105, Issue 2, Pages 114–118
DOI: https://doi.org/10.1134/S0021364017020035
Bibliographic databases:
Document Type: Article
Language: English
Citation: M. Luo, Y. E. Xu, Y. X. Song, “Modulation of band gap by normal strain and an applied electric field in SiC-based heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:2 (2017), 105; JETP Letters, 105:2 (2017), 114–118
Citation in format AMSBIB
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