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This article is cited in 8 scientific papers (total in 8 papers)
CONDENSED MATTER
Circular photogalvanic effect caused by the transitions between edge and 2D states in a 2D topological insulator
L. I. Magarillab, M. V. Entinba a Novosibirsk State University, Novosibirsk, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Abstract:
The electron absorption and the edge photocurrent of a 2D topological insulator are studied for transitions between edge states to 2D states. The circular polarized light is found to produce the edge photocurrent, the direction of which is determined by light polarization and edge orientation. It is shown that the edge-state current is found to exceed the 2D current owing to the topological protection of the edge states.
Received: 11.10.2016 Revised: 21.10.2016
Citation:
L. I. Magarill, M. V. Entin, “Circular photogalvanic effect caused by the transitions between edge and 2D states in a 2D topological insulator”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:11 (2016), 792–796; JETP Letters, 104:11 (2016), 771–775
Linking options:
https://www.mathnet.ru/eng/jetpl5129 https://www.mathnet.ru/eng/jetpl/v104/i11/p792
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Abstract page: | 180 | Full-text PDF : | 35 | References: | 46 | First page: | 10 |
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