|
This article is cited in 4 scientific papers (total in 4 papers)
OPTICS AND NUCLEAR PHYSICS
Two-photon confocal microscopy as a tool for nonequilibrium charge-carrier lifetime tomography in semiconductor materials
V. P. Kalinushkin, O. V. Uvarov Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, Russia
Abstract:
By the example of ZnSe crystals, the capabilities of two-photon confocal microscopy as a tool for obtaining “planar” maps of nonequilibrium charge-carrier lifetimes in semiconductor materials and for investigating other direct-gap semiconductors and semiconductor heterostructures are considered. It is shown that such maps with a depth step and an in-plane resolution of several microns can be obtained for distances from the surface up to 1 mm. This technique is used to visualize inhomogeneities in the crystals under study and to examine their structure and luminescence characteristics.
Received: 05.09.2016 Revised: 19.10.2016
Citation:
V. P. Kalinushkin, O. V. Uvarov, “Two-photon confocal microscopy as a tool for nonequilibrium charge-carrier lifetime tomography in semiconductor materials”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:11 (2016), 774–779; JETP Letters, 104:11 (2016), 754–758
Linking options:
https://www.mathnet.ru/eng/jetpl5126 https://www.mathnet.ru/eng/jetpl/v104/i11/p774
|
Statistics & downloads: |
Abstract page: | 142 | Full-text PDF : | 25 | References: | 45 | First page: | 12 |
|