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This article is cited in 16 scientific papers (total in 16 papers)
CONDENSED MATTER
Quantum anomalous Hall effect in magnetically modulated topological insulator/normal insulator heterostructures
V. N. Men'shovab, V. V. Tugushevab, E. V. Chulkovcdbe a National Research Center Kurchatov Institute, Moscow, Russia
b Tomsk State University, Tomsk, Russia
c Saint Petersburg State University, St. Petersburg, Russia
d Departamento de Física de Materiales, Facultad de Ciencias Químicas, UPV/EHU, 20080 San Sebastían, Basque Country, Spain
e Centro de Física de Materiales CFM-MPC, Centro Mixto CSIC-UPV/EHU, 20080 San Sebastían, Basque Country, Spain
Abstract:
We theoretically study how magnetic modulation can be used to manipulate the transport properties of heterostructures formed by a thin film of a three-dimensional topological insulator sandwiched between slabs of a normal insulator. Employing the $\mathbf{k\cdot p}$ scheme, in the framework of a continual approach, we argue that electron states of the system are spin-polarized when ultrathin magnetic insertions are incorporated into the film. We demonstrate that (i) the spin-polarization magnitude depends strongly on the magnetic insertion position in the film and (ii) there is the optimal insertion position to realize quantum anomalous Hall effect, which is a function of the material parameters, the film thickness and the topological insulator/normal insulator interface potential. For the heterostructure with a pair of symmetrically placed magnetic insertions, we calculate a phase diagram that shows a series of transitions between distinct quantum regimes of transverse conductivity. We provide consistent interpretation of recent experimental findings in the context of our results.
Received: 06.07.2016
Citation:
V. N. Men'shov, V. V. Tugushev, E. V. Chulkov, “Quantum anomalous Hall effect in magnetically modulated topological insulator/normal insulator heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:7 (2016), 480–487; JETP Letters, 104:7 (2016), 453–459
Linking options:
https://www.mathnet.ru/eng/jetpl5077 https://www.mathnet.ru/eng/jetpl/v104/i7/p480
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Abstract page: | 216 | Full-text PDF : | 49 | References: | 32 | First page: | 8 |
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