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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2016, Volume 104, Issue 5, Pages 311–317
DOI: https://doi.org/10.7868/S0370274X16170045 (Mi jetpl5052) 		 
This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Weak antilocalization in a three-dimensional topological insulator based on a high-mobility HgTe film

M. L. Savchenkoab, D. A. Kozlovab, Z. D. Kvonab, N. N. Mikhailovb, S. A. Dvoretskyb

a Novosibirsk State University, Novosibirsk, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
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DOI: https://doi.org/10.7868/S0370274X16170045
Abstract: The anomalous magnetoresistance (AMR) caused by the weak antilocalization effects in a three-dimensional topological insulator based on a strained mercury telluride film is experimentally studied. It is demonstrated that the obtained results are in a good agreement with the universal theory of Zduniak, Dyakonov, and Knap. It is found that the AMR in the bulk band gap is far below that expected for the system of Dirac fermions. Such a discrepancy can assumingly be related to a nonzero effective mass of Dirac fermions. The filling of energy bands in the bulk is accompanied by a pronounced increase in the AMR. This is a signature of the weak coupling between the surface and bulk charge carriers.
Funding agency Grant number
Russian Foundation for Basic Research 15-52-16008_НЦНИЛ_а
15-32-20828_мол_а_вед
Received: 13.07.2016
English version:
Journal of Experimental and Theoretical Physics Letters, 2016, Volume 104, Issue 5, Pages 302–308
DOI: https://doi.org/10.1134/S0021364016170112
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. L. Savchenko, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, “Weak antilocalization in a three-dimensional topological insulator based on a high-mobility HgTe film”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:5 (2016), 311–317; JETP Letters, 104:5 (2016), 302–308
Citation in format AMSBIB
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\paper Weak antilocalization in a three-dimensional topological insulator based on a high-mobility HgTe film
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    • This publication is cited in the following 7 articles:
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