Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pis'ma v Zh. Èksper. Teoret. Fiz.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2016, Volume 104, Issue 5, Pages 311–317
DOI: https://doi.org/10.7868/S0370274X16170045 (Mi jetpl5052) 		 
This article is cited in 8 scientific papers (total in 8 papers)

CONDENSED MATTER

Weak antilocalization in a three-dimensional topological insulator based on a high-mobility HgTe film

M. L. Savchenkoab, D. A. Kozlovab, Z. D. Kvonab, N. N. Mikhailovb, S. A. Dvoretskyb

a Novosibirsk State University, Novosibirsk, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Full-text PDF (1277 kB) Citations (8)
References:
PDF
HTML
DOI: https://doi.org/10.7868/S0370274X16170045
Abstract: The anomalous magnetoresistance (AMR) caused by the weak antilocalization effects in a three-dimensional topological insulator based on a strained mercury telluride film is experimentally studied. It is demonstrated that the obtained results are in a good agreement with the universal theory of Zduniak, Dyakonov, and Knap. It is found that the AMR in the bulk band gap is far below that expected for the system of Dirac fermions. Such a discrepancy can assumingly be related to a nonzero effective mass of Dirac fermions. The filling of energy bands in the bulk is accompanied by a pronounced increase in the AMR. This is a signature of the weak coupling between the surface and bulk charge carriers.
Funding agency Grant number
Russian Foundation for Basic Research 15-52-16008_НЦНИЛ_а
15-32-20828_мол_а_вед
Received: 13.07.2016
English version:
Journal of Experimental and Theoretical Physics Letters, 2016, Volume 104, Issue 5, Pages 302–308
DOI: https://doi.org/10.1134/S0021364016170112
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. L. Savchenko, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, “Weak antilocalization in a three-dimensional topological insulator based on a high-mobility HgTe film”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:5 (2016), 311–317; JETP Letters, 104:5 (2016), 302–308
Citation in format AMSBIB
\Bibitem{SavKozKvo16}
\by M.~L.~Savchenko, D.~A.~Kozlov, Z.~D.~Kvon, N.~N.~Mikhailov, S.~A.~Dvoretsky
\paper Weak antilocalization in a three-dimensional topological insulator based on a high-mobility HgTe film
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2016
\vol 104
\issue 5
\pages 311--317
\mathnet{http://mi.mathnet.ru/jetpl5052}
\crossref{https://doi.org/10.7868/S0370274X16170045}
\elib{https://elibrary.ru/item.asp?id=26625542}
\transl
\jour JETP Letters
\yr 2016
\vol 104
\issue 5
\pages 302--308
\crossref{https://doi.org/10.1134/S0021364016170112}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000388292500004}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-84994910756}
Linking options:
  • https://www.mathnet.ru/eng/jetpl5052
  • https://www.mathnet.ru/eng/jetpl/v104/i5/p311
    • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
    Statistics & downloads:
    Abstract page:185
    Full-text PDF :47
    References:44
    First page:15
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024