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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2016, Volume 104, Issue 2, Pages 128–132
DOI: https://doi.org/10.7868/S0370274X16140125 (Mi jetpl5034) 		 
This article is cited in 6 scientific papers (total in 6 papers)

MISCELLANEOUS

Optical phonon cascade emission by photoelectrons at a p-GaN (Cs,O)-vacuum interface

S. A. Rozhkovab, V. V. Bakinb, D. V. Gorshkovab, S. N. Kosolobovb, H. E. Sheiblerb, A. S. Terekhovb

a Novosibirsk State University, Novosibirsk, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Full-text PDF (234 kB) Citations (6)
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DOI: https://doi.org/10.7868/S0370274X16140125
Abstract: It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN (Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons. In the quantum efficiency spectrum of the p-GaN (Cs,O) photocathode, an exciton peak has been identified, indicating a significant contribution of the electron-hole interaction to the generation of free electrons in heavily doped p-GaN.
Funding agency Grant number
Russian Foundation for Basic Research 16-02-00534_а
Received: 24.05.2016
English version:
Journal of Experimental and Theoretical Physics Letters, 2016, Volume 104, Issue 2, Pages 135–139
DOI: https://doi.org/10.1134/S0021364016140113
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Rozhkov, V. V. Bakin, D. V. Gorshkov, S. N. Kosolobov, H. E. Sheibler, A. S. Terekhov, “Optical phonon cascade emission by photoelectrons at a p-GaN (Cs,O)-vacuum interface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016), 128–132; JETP Letters, 104:2 (2016), 135–139
Citation in format AMSBIB
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\paper Optical phonon cascade emission by photoelectrons at a p-GaN (Cs,O)-vacuum interface
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\yr 2016
\vol 104
\issue 2
\pages 128--132
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\transl
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    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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