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This article is cited in 5 scientific papers (total in 5 papers)
CONDENSED MATTER
Period of photoconductivity oscillations and charge dynamics of quantum dots in $p-i-n$ GaAs/InAs/AlAs heterojunctions
Yu. N. Khanina, E. E. Vdovina, O. Makarovskiib, M. Heninicb a Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432, RussiaS
b School of Physics and Astronomy, University of Nottingham, NG7 2RD Nottingham, UK
c Nanoscience Centre, University of Nottingham, NG7 2RD Nottingham, UK
Abstract:
Quantum oscillations of photoconductivity in $p-i-n$ GaAs/InAs/AlAs quantum-dot heterojunctions have been studied. The dominating effect of the dynamics of charge accumulation of optically excited holes at quantum dots on the oscillation period and on the general evolution of the holes with a change in the illumination power has been shown within a simple electrostatic model. Investigation of the temperature dependence of the oscillating structure of the current-voltage characteristics has confirmed our interpretation.
Received: 30.09.2015
Citation:
Yu. N. Khanin, E. E. Vdovin, O. Makarovskii, M. Henini, “Period of photoconductivity oscillations and charge dynamics of quantum dots in $p-i-n$ GaAs/InAs/AlAs heterojunctions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:11 (2015), 830–836; JETP Letters, 102:11 (2015), 720–726
Linking options:
https://www.mathnet.ru/eng/jetpl4802 https://www.mathnet.ru/eng/jetpl/v102/i11/p830
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