Abstract:
We present measurements of resistivity ρρ in highly oriented LaNiO33 films grown on LaAlO33 substrates by using a pulsed laser deposition technique. The experimental data are found to follow a universal ρ(T)∝T3/2ρ(T)∝T3/2 dependence for the entire temperature interval (20K<T<30020K<T<300K). The observed behavior has been attributed to a resonant scattering of electrons on antiferromagnetic fluctuations (with a characteristic energy ℏωsf≃2.1ℏωsf≃2.1meV) triggered by spin-density wave propagating through the interface boundary of LaNiO33/LaAlO33 sandwich.
Citation:
S. Sergeenkov, L. Cichetto, Jr., E. Longo, F. M. Araujo-Moreira, “Evidence for resonant scattering of electrons by spin fluctuations in LaNiO33/LaAlO33 heterostructures grown by pulsed laser deposition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:6 (2015), 423–426; JETP Letters, 102:6 (2015), 383–386