Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2015, Volume 102, Issue 4, Pages 250–252
DOI: https://doi.org/10.7868/S0370274X15160067 (Mi jetpl4707) 		 
This article is cited in 1 scientific paper (total in 1 paper)

CONDENSED MATTER

Ferromagnetism mediated by the upper Hubbard band in selectively doped GaAs/AlGaAs structures

N. V. Agrinskaya, V. I. Kozub

Ioffe Institute, 194021 S. Petersburg, Russia
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DOI: https://doi.org/10.7868/S0370274X15160067
Abstract: We consider in detail the indirect exchange between Mn ions imbedded to GaAs/AlGaAs quantum wells where the barriers are doped by acceptor impurity supported by the carriers of the upper Hubbard band supplied by barriers acceptors. A special attention is paid to an interplay between strong delocalization of the carriers within the upper Hubbard band (allowing exchange between well separated ions) and relatively weak coupling of these carriers with Mn ions. It is shown, that, despite of the latter factor, the values of Curie temperatures can for such structures be as high as room temperatures.
Received: 10.06.2015
English version:
Journal of Experimental and Theoretical Physics Letters, 2015, Volume 102, Issue 4, Pages 222–225
DOI: https://doi.org/10.1134/S002136401516002X
Bibliographic databases:
Document Type: Article
Language: English
Citation: N. V. Agrinskaya, V. I. Kozub, “Ferromagnetism mediated by the upper Hubbard band in selectively doped GaAs/AlGaAs structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:4 (2015), 250–252; JETP Letters, 102:4 (2015), 222–225
Citation in format AMSBIB
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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