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This article is cited in 6 scientific papers (total in 6 papers)
CONDENSED MATTER
Conductance of a lateral $p-n$ junction in two-dimensional HgTe structures with an inverted spectrum: The role of edge states
G. M. Min'kovab, A. A. Sherstobitovba, A. V. Germanenkob, O. E. Rutb, S. A. Dvoretskiic, N. N. Mikhailovc a Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. Kovalevskoi 18, Yekaterinburg, 620137, Russia
b Ural Federal University, ul. Mira 19, Yekaterinburg, 620000, Russia
c Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akedemika Lavrent'eva 13, Novosibirsk, 630090, Russia
Abstract:
The conductance of a lateral $p-n$ junction in two-dimensional HgTe structures with an inverted spectrum is measured. It is shown that Klein tunneling is rather inefficient in 8- to 10-nm-thick quantum wells and does not hinder the identification of the edge-state contribution to the conductance. The separation of the contributions from the $p-n$ junction and the edge states is possible upon the simultaneous measurement of the resistance of the $p-n$ junction regions in channels with substantially different widths.
Received: 29.01.2015 Revised: 15.02.2015
Citation:
G. M. Min'kov, A. A. Sherstobitov, A. V. Germanenko, O. E. Rut, S. A. Dvoretskii, N. N. Mikhailov, “Conductance of a lateral $p-n$ junction in two-dimensional HgTe structures with an inverted spectrum: The role of edge states”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:7 (2015), 522–526; JETP Letters, 101:7 (2015), 469–473
Linking options:
https://www.mathnet.ru/eng/jetpl4598 https://www.mathnet.ru/eng/jetpl/v101/i7/p522
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