Abstract:
The conductance of a lateral p−n junction in two-dimensional HgTe structures with an inverted spectrum is measured. It is shown that Klein tunneling is rather inefficient in 8- to 10-nm-thick quantum wells and does not hinder the identification of the edge-state contribution to the conductance. The separation of the contributions from the p−n junction and the edge states is possible upon the simultaneous measurement of the resistance of the p−n junction regions in channels with substantially different widths.
Citation:
G. M. Min'kov, A. A. Sherstobitov, A. V. Germanenko, O. E. Rut, S. A. Dvoretskii, N. N. Mikhailov, “Conductance of a lateral p−n junction in two-dimensional HgTe structures with an inverted spectrum: The role of edge states”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:7 (2015), 522–526; JETP Letters, 101:7 (2015), 469–473