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This article is cited in 5 scientific papers (total in 5 papers)
CONDENSED MATTER
Topological defects in smectic islands in freely suspended films
P. V. Dolganova, N. S. Shuravinba, V. K. Dolganova, E. I. Katsc a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432, Russia
b Moscow Institute of Physics and Technology (State University), Institutskii per. 9, Dolgoprudnyi, Moscow region, 141700, Russia
c Landau Institute for Theoretical Physics, Russian Academy of Sciences, ul. Kosygina 1, Moscow, 117940, Russia
Abstract:
Textures created by point topological defects in defects in polar smectic films have been studied. Such defects have been created by the dynamic method (substance from a very thin film does not have time to approach its edges and thicker islands with a topological defect are controllably formed). Topological defects have been studied in smectic islands with a thickness of six to eight molecular layers in a film with a thickness of two molecular layers. Competition between two-dimensional orientational elasticity in islands and the orientation of the director at the boundary of smectic islands results in different configurations of the field of the $\mathbf{c}$-director created by a topological defect. A transition between configurations occurs at a change in the dimension of islands and depends on the dipole polarization of a liquid crystal. The comparison of the numerical calculations of the structure of topological defects with experimental data has allowed determining the dependence of the anisotropy of the two-dimensional orientational elasticity on the polarization of smectic films.
Received: 16.02.2015
Citation:
P. V. Dolganov, N. S. Shuravin, V. K. Dolganov, E. I. Kats, “Topological defects in smectic islands in freely suspended films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:7 (2015), 505–511; JETP Letters, 101:7 (2015), 453–458
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https://www.mathnet.ru/eng/jetpl4595 https://www.mathnet.ru/eng/jetpl/v101/i7/p505
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Abstract page: | 160 | Full-text PDF : | 43 | References: | 38 | First page: | 13 |
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