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This article is cited in 7 scientific papers (total in 7 papers)
CONDENSED MATTER
Surface states in a HgTe quantum well and scattering by surface roughness
A. A. Dobretsovaab, L. S. Braginskiiab, M. V. Entinba, Z. D. Kvonab, N. N. Mikhailovb, S. A. Dvoretskyb a Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russia
Abstract:
Scattering of two-dimensional electrons in wide ($d=18$–$22$ nm) HgTe-based quantum wells has been thoroughly studied. The mobility has been found to reach a maximum and then to decrease at two-dimensional electron densities above ($2$–$6$)$\times 10^{11}$ cm$^{-2}$ owing to scattering by roughness of the quantum well. The theory of scattering by roughness has been elaborated taking into account transformation of the wavefunction with an increase in the electron density. Good agreement of this theory with the experiment indicates the existence of surface states at the interfaces of the wide HgTe quantum well.
Received: 20.01.2015
Citation:
A. A. Dobretsova, L. S. Braginskii, M. V. Entin, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, “Surface states in a HgTe quantum well and scattering by surface roughness”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:5 (2015), 360–364; JETP Letters, 101:5 (2015), 330–333
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https://www.mathnet.ru/eng/jetpl4571 https://www.mathnet.ru/eng/jetpl/v101/i5/p360
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Abstract page: | 160 | Full-text PDF : | 41 | References: | 24 | First page: | 6 |
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