Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2015, Volume 101, Issue 4, Pages 300–305
DOI: https://doi.org/10.7868/S0370274X1504013X (Mi jetpl4562) 		 
This article is cited in 11 scientific papers (total in 11 papers)

SCIENTIFIC SUMMARIES

Two-dimensional electrons in (100)-oriented silicon field-effect structures in the region of low concentrations and high mobilities

V. T. Dolgopolov

Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432, Russia
Full-text PDF (246 kB) Citations (11)
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DOI: https://doi.org/10.7868/S0370274X1504013X
Abstract: A comparative analysis of experimental data on electron transport in Si (100) MOSFETs in the region of high mobilities and strong electron-electron interaction is carried out. It is shown that electrons can be described by the model of a noninteracting gas with the renormalized mass and Lande factor, which allows experimentally verifiable predictions.
Received: 13.01.2015
English version:
Journal of Experimental and Theoretical Physics Letters, 2015, Volume 101, Issue 4, Pages 282–287
DOI: https://doi.org/10.1134/S0021364015040062
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. T. Dolgopolov, “Two-dimensional electrons in (100)-oriented silicon field-effect structures in the region of low concentrations and high mobilities”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:4 (2015), 300–305; JETP Letters, 101:4 (2015), 282–287
Citation in format AMSBIB
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    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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    Full-text PDF :36
    References:26
    First page:11
     
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