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This article is cited in 7 scientific papers (total in 7 papers)
CONDENSED MATTER
Electric injection and detection of spin-polarized electrons in lateral spin valves on ferromagnetic metal-semiconductor InSb heterojunctions
N. A. Viglin, V. V. Ustinov, V. M. Tsvelikhovskaya, T. N. Pavlov Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
Abstract:
A lateral spintronic device has been created on the basis of the InSb semiconductor with an iron injector and an iron detector of spin-polarized electrons that are separated from the semiconductor channel by a MgO tunnel barrier. The electric injection and detection of spin-polarized electrons in a single device have been demonstrated. Data on the parameters of the spin subsystem of conduction electrons in the InSb semiconductor and spin polarization of injected electrons in the semiconductor on the Fe/MgO/InSb heterojunction have been obtained from the measurements of the Hanle effect.
Received: 11.11.2014 Revised: 02.12.2014
Citation:
N. A. Viglin, V. V. Ustinov, V. M. Tsvelikhovskaya, T. N. Pavlov, “Electric injection and detection of spin-polarized electrons in lateral spin valves on ferromagnetic metal-semiconductor InSb heterojunctions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:2 (2015), 118–123; JETP Letters, 101:2 (2015), 113–117
Linking options:
https://www.mathnet.ru/eng/jetpl4531 https://www.mathnet.ru/eng/jetpl/v101/i2/p118
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Abstract page: | 189 | Full-text PDF : | 68 | References: | 33 | First page: | 9 |
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