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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2014, Volume 100, Issue 11, Pages 824–830
DOI: https://doi.org/10.7868/S0370274X14230088
(Mi jetpl4486)
 

This article is cited in 17 scientific papers (total in 17 papers)

CONDENSED MATTER

Quantum hall effect in a system of gapless Dirac fermions in HgTe quantum wells

D. A. Kozlovab, Z. D. Kvonab, N. N. Mikhailovb, S. A. Dvoretskiib

a Novosibirsk State University
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
References:
Abstract: The specific features of the quantum Hall effect (QHE) in a system of gapless Dirac fermions in HgTe quantum wells have been studied. It has been established that the behavior of the QHE is asymmetric with respect to the Dirac point: at the lowest temperature ($0.2$ K), quantization of hole fermions occurs in weak magnetic fields down to $0.15$ T, whereas quantization of the electron part of the Dirac cone occurs only in fields of about $0.5$ T. Such an asymmetry is caused by the effect of sideband maxima in the valence band forming the heavy-hole valleys, which play the role of a reservoir and screen out the fluctuation potential. The analysis of the behavior of the dissipative component of the conductivity near the Dirac point has led to a conclusion on the existence of the zeroth Landau level at this point.
Received: 22.10.2014
English version:
Journal of Experimental and Theoretical Physics Letters, 2014, Volume 100, Issue 11, Pages 724–730
DOI: https://doi.org/10.1134/S0021364014230076
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretskii, “Quantum hall effect in a system of gapless Dirac fermions in HgTe quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:11 (2014), 824–830; JETP Letters, 100:11 (2014), 724–730
Citation in format AMSBIB
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  • This publication is cited in the following 17 articles:
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