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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2001, Volume 73, Issue 9, Pages 561–564
(Mi jetpl4392)
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CONDENSED MATTER
Elastic state of stress in narrow-gap semiconductors: A fundamental possibility to increase the quantum yield of infrared radiation
S. G. Gassan-zade, S. V. Staryi, M. V. Strikha, G. A. Shepel'skii, V. A. Boĭko Institute of Semiconductor Physics NAS, Kiev
Abstract:
In a narrow-gap semiconductor with a direct band gap, an elastic state of stress provides the possibility to considerably reduce the collisional interband recombination because of the transformation of the valence band. As a result, the quantum yield of infrared radiation in the interband transition region increases drastically. The experimental results are obtained for InSb crystals.
Received: 15.12.2000 Revised: 29.03.2001
Citation:
S. G. Gassan-zade, S. V. Staryi, M. V. Strikha, G. A. Shepel'skii, V. A. Boǐko, “Elastic state of stress in narrow-gap semiconductors: A fundamental possibility to increase the quantum yield of infrared radiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:9 (2001), 561–564; JETP Letters, 73:9 (2001), 495–497
Linking options:
https://www.mathnet.ru/eng/jetpl4392 https://www.mathnet.ru/eng/jetpl/v73/i9/p561
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Abstract page: | 217 | Full-text PDF : | 42 | References: | 1 |
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