Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2001, Volume 73, Issue 9, Pages 536–541 (Mi jetpl4387)  
This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary

G. A. Tarnavskiia, S. I. Shpaka, M. S. Obrechtb

a Khristianovich Institute of Theoretical and Applied Mechanics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
b Siborg System Inc., University of Waterloo
Full-text PDF (495 kB) Citations (2)
Abstract: Based on computer simulation of the physicochemical segregation processes involving dopants implanted into a host material (silicon), the details of boron injection were investigated for four types of angular configurations (direct and inverse kinks and cavities of the «trench» and «square» types) of the «silicon/silicon dioxide» oxidation boundary. A complicated picture of the B distribution inside the Si and SiO2 regions and at the SiO2/Si front was obtained and analyzed in general terms.
Received: 23.03.2001
English version:
Journal of Experimental and Theoretical Physics Letters, 2001, Volume 73, Issue 9, Pages 474–478
DOI: https://doi.org/10.1134/1.1385661
Bibliographic databases:
Document Type: Article
PACS: 02.70.-c, 66.30.Jt, 68.10.Gw
Language: Russian
Citation: G. A. Tarnavskii, S. I. Shpak, M. S. Obrecht, “Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:9 (2001), 536–541; JETP Letters, 73:9 (2001), 474–478
Citation in format AMSBIB
\Bibitem{TarShpObr01}
\by G.~A.~Tarnavskii, S.~I.~Shpak, M.~S.~Obrecht
\paper Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2001
\vol 73
\issue 9
\pages 536--541
\mathnet{http://mi.mathnet.ru/jetpl4387}
\transl
\jour JETP Letters
\yr 2001
\vol 73
\issue 9
\pages 474--478
\crossref{https://doi.org/10.1134/1.1385661}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-0040079697}
Linking options:
  • https://www.mathnet.ru/eng/jetpl4387
  • https://www.mathnet.ru/eng/jetpl/v73/i9/p536
    • This publication is cited in the following 2 articles:
    1. Yang Chen, Xiajie Meng, Jianbin Fan, Mingzhang Deng, Haoran Ye, Cheng Qian, Peng Zhang, Guoqiang Xing, Jian Yu, Solar Energy, 264 (2023), 112078  crossref
    2. G. A. Tarnavskii, A. V. Aliev, A. G. Tarnavskii, Sib. zhurn. vychisl. matem., 10:4 (2007), 401–416  mathnet
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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    Full-text PDF :64
    References:1
     
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