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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2001, Volume 73, Issue 9, Pages 536–541
(Mi jetpl4387)
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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary
G. A. Tarnavskiia, S. I. Shpaka, M. S. Obrechtb a Khristianovich Institute of Theoretical and Applied Mechanics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
b Siborg System Inc., University of Waterloo
Abstract:
Based on computer simulation of the physicochemical segregation processes involving dopants implanted into a host material (silicon), the details of boron injection were investigated for four types of angular configurations (direct and inverse kinks and cavities of the «trench» and «square» types) of the «silicon/silicon dioxide» oxidation boundary. A complicated picture of the B distribution inside the Si and SiO$_2$ regions and at the SiO$_2$/Si front was obtained and analyzed in general terms.
Received: 23.03.2001
Citation:
G. A. Tarnavskii, S. I. Shpak, M. S. Obrecht, “Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:9 (2001), 536–541; JETP Letters, 73:9 (2001), 474–478
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https://www.mathnet.ru/eng/jetpl4387 https://www.mathnet.ru/eng/jetpl/v73/i9/p536
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Abstract page: | 148 | Full-text PDF : | 53 | References: | 1 |
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