Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Pis'ma v Zh. Èksper. Teoret. Fiz.:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2001, Volume 73, Issue 9, Pages 536–541 (Mi jetpl4387)  

This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary

G. A. Tarnavskiia, S. I. Shpaka, M. S. Obrechtb

a Khristianovich Institute of Theoretical and Applied Mechanics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
b Siborg System Inc., University of Waterloo
Full-text PDF (495 kB) Citations (2)
Abstract: Based on computer simulation of the physicochemical segregation processes involving dopants implanted into a host material (silicon), the details of boron injection were investigated for four types of angular configurations (direct and inverse kinks and cavities of the «trench» and «square» types) of the «silicon/silicon dioxide» oxidation boundary. A complicated picture of the B distribution inside the Si and SiO$_2$ regions and at the SiO$_2$/Si front was obtained and analyzed in general terms.
Received: 23.03.2001
English version:
Journal of Experimental and Theoretical Physics Letters, 2001, Volume 73, Issue 9, Pages 474–478
DOI: https://doi.org/10.1134/1.1385661
Bibliographic databases:
Document Type: Article
PACS: 02.70.-c, 66.30.Jt, 68.10.Gw
Language: Russian
Citation: G. A. Tarnavskii, S. I. Shpak, M. S. Obrecht, “Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:9 (2001), 536–541; JETP Letters, 73:9 (2001), 474–478
Citation in format AMSBIB
\Bibitem{TarShpObr01}
\by G.~A.~Tarnavskii, S.~I.~Shpak, M.~S.~Obrecht
\paper Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2001
\vol 73
\issue 9
\pages 536--541
\mathnet{http://mi.mathnet.ru/jetpl4387}
\transl
\jour JETP Letters
\yr 2001
\vol 73
\issue 9
\pages 474--478
\crossref{https://doi.org/10.1134/1.1385661}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-0040079697}
Linking options:
  • https://www.mathnet.ru/eng/jetpl4387
  • https://www.mathnet.ru/eng/jetpl/v73/i9/p536
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
    Statistics & downloads:
    Abstract page:146
    Full-text PDF :52
    References:1
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024