|
Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2001, Volume 73, Issue 1, Pages 33–35
(Mi jetpl4285)
|
|
|
|
This article is cited in 1 scientific paper (total in 1 paper)
CONDENSED MATTER
Hexavacancies in crystalline silicon
A. S. Kaminskii Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
Abstract:
The kinetics of disorientation of $B_{80}^4$centers is studied. The reorientation energy of the centers is determined to be $\sim1.5$ eV. Based on the fact that this value is close to the energy of hexavacancy transition from the ground state to the first metastable state, it is concluded that the $B_{80}^4$ center is a ring hexavacancy. The reorientation mechanism is explained by the hexavacancy transition to the metastable state and, then, to a state with a new orientation.
Received: 09.10.2000 Revised: 23.11.2000
Citation:
A. S. Kaminskii, “Hexavacancies in crystalline silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:1 (2001), 33–35; JETP Letters, 73:1 (2001), 28–30
Linking options:
https://www.mathnet.ru/eng/jetpl4285 https://www.mathnet.ru/eng/jetpl/v73/i1/p33
|
Statistics & downloads: |
Abstract page: | 102 | Full-text PDF : | 53 | References: | 1 |
|