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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2001, Volume 74, Issue 10, Pages 546–550
(Mi jetpl4252)
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This article is cited in 10 scientific papers (total in 10 papers)
CONDENSED MATTER
Thermoelectric and galvanomagnetic properties of chalcogens (Te, Se) at high pressures up to $30$ GPa
V. V. Shchennikov, S. V. Ovsyannikov Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
Abstract:
The longitudinal and transverse Nernst–Ettingshausen effects have been measured at high pressures up to $30$ GPa. The results of studying Te and Se in the region of metal-semiconductor phase transformations are presented as a demonstration of the possibilities of the given technique. In agreement with magnetoresistance data, it was found that the hole mobility grows with increasing pressure as a result of a decrease in the band gap width. Mechanisms of hole scattering at high pressures were determined.
Received: 19.09.2001 Revised: 15.10.2001
Citation:
V. V. Shchennikov, S. V. Ovsyannikov, “Thermoelectric and galvanomagnetic properties of chalcogens (Te, Se) at high pressures up to $30$ GPa”, Pis'ma v Zh. Èksper. Teoret. Fiz., 74:10 (2001), 546–550; JETP Letters, 74:10 (2001), 486–490
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https://www.mathnet.ru/eng/jetpl4252 https://www.mathnet.ru/eng/jetpl/v74/i10/p546
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Abstract page: | 124 | Full-text PDF : | 47 | References: | 1 |
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