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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2001, Volume 74, Issue 3, Pages 200–203
(Mi jetpl4184)
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This article is cited in 32 scientific papers (total in 32 papers)
CONDENSED MATTER
Long electron spin memory times in gallium arsenide
R. I. Dzhioeva, B. P. Zakharchenyaa, V. L. Koreneva, D. Gammonb, D. S. Katzerb a Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
b Naval Research Laboratory
Abstract:
Extremely long electron spin memory times in GaAs are reported. It was established by the optical orientation method that the spin relaxation time of electrons localized at shallow donors in $n$-type gallium arsenide $(N_d-N_A\approx10^{14}\,$cm$^{-3}$) is $290\pm30\,$ ns at a temperature of $4.2$ K. The exchange interaction of quasi-free electrons and electrons at donors suppresses the main spin-loss channel for electrons localized at donors-spin relaxation due to the hyperfine interaction with lattice nuclei.
Received: 06.07.2001
Citation:
R. I. Dzhioev, B. P. Zakharchenya, V. L. Korenev, D. Gammon, D. S. Katzer, “Long electron spin memory times in gallium arsenide”, Pis'ma v Zh. Èksper. Teoret. Fiz., 74:3 (2001), 200–203; JETP Letters, 74:3 (2001), 182–185
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https://www.mathnet.ru/eng/jetpl4184 https://www.mathnet.ru/eng/jetpl/v74/i3/p200
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Abstract page: | 139 | Full-text PDF : | 97 | References: | 1 |
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