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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2001, Volume 74, Issue 3, Pages 182–185 (Mi jetpl4180)  
This article is cited in 6 scientific papers (total in 6 papers)

CONDENSED MATTER

Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates

A. A. Bykov, A. K. Bakarov, A. V. Goran, A. V. Latyshev, A. I. Toropov

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (228 kB) Citations (6)
Abstract: The anisotropy of the longitudinal magnetoresistance has been found for a two-dimensional electron gas with a high mobility and concentration in GaAs quantum wells grown by molecular beam epitaxy on GaAs(100) substrates. The experimental data obtained are explained by the self-organization of spatially modulated heterointerfaces and are in agreement with the results of studying growth surfaces by atomic force microscopy.
Received: 28.06.2001
English version:
Journal of Experimental and Theoretical Physics Letters, 2001, Volume 74, Issue 3, Pages 164–167
DOI: https://doi.org/10.1134/1.1410222
Bibliographic databases:
Document Type: Article
PACS: 73.23.-b
Language: Russian
Citation: A. A. Bykov, A. K. Bakarov, A. V. Goran, A. V. Latyshev, A. I. Toropov, “Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates”, Pis'ma v Zh. Èksper. Teoret. Fiz., 74:3 (2001), 182–185; JETP Letters, 74:3 (2001), 164–167
Citation in format AMSBIB
\Bibitem{BykBakGor01}
\by A.~A.~Bykov, A.~K.~Bakarov, A.~V.~Goran, A.~V.~Latyshev, A.~I.~Toropov
\paper Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2001
\vol 74
\issue 3
\pages 182--185
\mathnet{http://mi.mathnet.ru/jetpl4180}
\transl
\jour JETP Letters
\yr 2001
\vol 74
\issue 3
\pages 164--167
\crossref{https://doi.org/10.1134/1.1410222}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-0039890423}
Linking options:
  • https://www.mathnet.ru/eng/jetpl4180
  • https://www.mathnet.ru/eng/jetpl/v74/i3/p182
    • This publication is cited in the following 6 articles:
    1. Nomokonov D.V., Goran A.V., Bykov A.A., J. Appl. Phys., 125:16 (2019), 164301  crossref  isi  scopus
    2. Shi Q., Zudov M.A., Morrison C., Myronov M., Phys. Rev. B, 92:16 (2015), 161405  crossref  isi  scopus
    3. A. A. Bykov, A. V. Goran, W. Mayer, S. A. Vitkalov, JETP Letters, 98:11 (2013), 717–721  mathnet  mathnet  crossref  crossref  isi
    4. Dmitriy V. Dmitriev, Igor V. Marchishin, Andrey V. Goran, Alexey A. Bykov, 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings, 2011, 219  crossref
    5. A. A. Bykov, I. V. Marchishin, A. V. Goran, D. V. Dmitriev, Applied Physics Letters, 97:8 (2010)  crossref
    6. A V Goran, A A Bykov, A I Toropov, Semicond. Sci. Technol., 23:10 (2008), 105017  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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