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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2001, Volume 74, Issue 3, Pages 182–185
(Mi jetpl4180)
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This article is cited in 6 scientific papers (total in 6 papers)
CONDENSED MATTER
Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates
A. A. Bykov, A. K. Bakarov, A. V. Goran, A. V. Latyshev, A. I. Toropov Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
The anisotropy of the longitudinal magnetoresistance has been found for a two-dimensional electron gas with a high mobility and concentration in GaAs quantum wells grown by molecular beam epitaxy on GaAs(100) substrates. The experimental data obtained are explained by the self-organization of spatially modulated heterointerfaces and are in agreement with the results of studying growth surfaces by atomic force microscopy.
Received: 28.06.2001
Citation:
A. A. Bykov, A. K. Bakarov, A. V. Goran, A. V. Latyshev, A. I. Toropov, “Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates”, Pis'ma v Zh. Èksper. Teoret. Fiz., 74:3 (2001), 182–185; JETP Letters, 74:3 (2001), 164–167
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https://www.mathnet.ru/eng/jetpl4180 https://www.mathnet.ru/eng/jetpl/v74/i3/p182
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Abstract page: | 144 | Full-text PDF : | 104 | References: | 1 |
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